Issued Patents 2019
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10483407 | Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods | Fei Wang, Kunal Shrotri, Anish A. Khandekar, Duo Mao, Zhixin Xu +3 more | 2019-11-19 |