Issued Patents 2019
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510423 | Mitigating disturbances of memory cells | Mark Fischer, Adam Johnson | 2019-12-17 |
| 10504909 | Plate node configurations and operations for a memory array | — | 2019-12-10 |
| 10504590 | Memory device with reduced neighbor memory cell disturbance | Efrem Bolandrina | 2019-12-10 |
| 10504576 | Current separation for memory sensing | — | 2019-12-10 |
| 10468085 | Redundancy array column decoder for memory | Xinwei Guo | 2019-11-05 |
| 10446220 | Sense amplifier with lower offset and increased speed | Xinwei Guo | 2019-10-15 |
| 10446502 | Apparatuses and methods for shielded memory architecture | Ferdinando Bedeschi, Umberto Di Vincenzo | 2019-10-15 |
| 10438642 | Offset compensation for ferroelectric memory cell sensing | — | 2019-10-08 |
| 10431281 | Access schemes for section-based data protection in a memory device | Richard E. Fackenthal, Jahanshir J. Javanifard | 2019-10-01 |
| 10410709 | Techniques for sensing logic values stored in memory cells using sense amplifiers that are selectively isolated from digit lines | Duane R. Mills | 2019-09-10 |
| 10395718 | Charge mirror-based sensing for ferroelectric memory | Xinwei Guo | 2019-08-27 |
| 10395697 | Self-referencing sensing schemes with coupling capacitance | Mahdi Jamali, William A. Melton, Xinwei Guo, Yasuko Hattori | 2019-08-27 |
| 10388361 | Differential amplifier schemes for sensing memory cells | Stefan Frederik Schippers, Xinwei Guo | 2019-08-20 |
| 10388351 | Wear leveling for random access and ferroelectric memory | Richard E. Fackenthal, Duane R. Mills | 2019-08-20 |
| 10290341 | Self-reference for ferroelectric memory | — | 2019-05-14 |
| 10248592 | Interrupted write operation in a serial interface memory with a portion of a memory address | Graziano Mirichigni | 2019-04-02 |
| 10192606 | Charge extraction from ferroelectric memory cell using sense capacitors | — | 2019-01-29 |
| 10170173 | Charge mirror-based sensing for ferroelectric memory | Xinwei Guo | 2019-01-01 |