| 10510423 |
Mitigating disturbances of memory cells |
Mark Fischer, Adam Johnson |
2019-12-17 |
| 10504909 |
Plate node configurations and operations for a memory array |
— |
2019-12-10 |
| 10504590 |
Memory device with reduced neighbor memory cell disturbance |
Efrem Bolandrina |
2019-12-10 |
| 10504576 |
Current separation for memory sensing |
— |
2019-12-10 |
| 10468085 |
Redundancy array column decoder for memory |
Xinwei Guo |
2019-11-05 |
| 10446220 |
Sense amplifier with lower offset and increased speed |
Xinwei Guo |
2019-10-15 |
| 10446502 |
Apparatuses and methods for shielded memory architecture |
Ferdinando Bedeschi, Umberto Di Vincenzo |
2019-10-15 |
| 10438642 |
Offset compensation for ferroelectric memory cell sensing |
— |
2019-10-08 |
| 10431281 |
Access schemes for section-based data protection in a memory device |
Richard E. Fackenthal, Jahanshir J. Javanifard |
2019-10-01 |
| 10410709 |
Techniques for sensing logic values stored in memory cells using sense amplifiers that are selectively isolated from digit lines |
Duane R. Mills |
2019-09-10 |
| 10395718 |
Charge mirror-based sensing for ferroelectric memory |
Xinwei Guo |
2019-08-27 |
| 10395697 |
Self-referencing sensing schemes with coupling capacitance |
Mahdi Jamali, William A. Melton, Xinwei Guo, Yasuko Hattori |
2019-08-27 |
| 10388361 |
Differential amplifier schemes for sensing memory cells |
Stefan Frederik Schippers, Xinwei Guo |
2019-08-20 |
| 10388351 |
Wear leveling for random access and ferroelectric memory |
Richard E. Fackenthal, Duane R. Mills |
2019-08-20 |
| 10290341 |
Self-reference for ferroelectric memory |
— |
2019-05-14 |
| 10248592 |
Interrupted write operation in a serial interface memory with a portion of a memory address |
Graziano Mirichigni |
2019-04-02 |
| 10192606 |
Charge extraction from ferroelectric memory cell using sense capacitors |
— |
2019-01-29 |
| 10170173 |
Charge mirror-based sensing for ferroelectric memory |
Xinwei Guo |
2019-01-01 |
