| 10490483 |
Low capacitance through substrate via structures |
Deepak Chandra Pandey, Haitao Liu |
2019-11-26 |
| 10418379 |
Integrated structures comprising channel material extending into source material |
Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda |
2019-09-17 |
| 10388864 |
Transistors and methods of forming transistors |
Kamal M. Karda, Gurtej S. Sandhu |
2019-08-20 |
| 10381365 |
Integrated structures containing vertically-stacked memory cells |
Haitao Liu, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang |
2019-08-13 |
| 10381357 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages |
Kamal M. Karda, Srinivas Pulugurtha, Rajesh N. Gupta |
2019-08-13 |
| 10304518 |
Apparatuses with compensator lines laid out along wordlines and spaced apart from wordlines by dielectric, compensator lines being independently controlled relative to the wordlines providing increased on-current in wordlines, reduced leakage in coupled transistors and longer retention time in coupled memory cells |
Deepak Chandra Pandey, Haitao Liu |
2019-05-28 |
| 10297612 |
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors |
Kamal M. Karda, Gurtej S. Sandhu |
2019-05-21 |
| 10269805 |
Apparatuses having body connection lines coupled with access devices |
Deepak Chandra Pandey, Haitao Liu, Sanh D. Tang |
2019-04-23 |
