| 10446656 |
Memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Sagy Levy |
2019-10-15 |
| 10424592 |
Method of integrating a charge-trapping gate stack into a CMOS flow |
— |
2019-09-24 |
| 10418373 |
Method of ONO stack formation |
— |
2019-09-17 |
| 10374067 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Sagy Levy, Fredrick B. Jenne, Sam Geha |
2019-08-06 |
| 10332599 |
Bias scheme for word programming in non-volatile memory and inhibit disturb reduction |
Gary Menezes, Ali Keshavarzi, Venkatraman Prabhakar |
2019-06-25 |
| 10319733 |
Oxide formation in a plasma process |
Jeong Soo Byun |
2019-06-11 |
| 10312336 |
Memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Sagy Levy |
2019-06-04 |
| 10304968 |
Radical oxidation process for fabricating a nonvolatile charge trap memory device |
Sagy Levy, Jeong Soo Byun |
2019-05-28 |
| 10263087 |
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
Sagy Levy, Fredrick B. Jenne |
2019-04-16 |
| 10199229 |
SONOS stack with split nitride memory layer |
Fredrick B. Jenne |
2019-02-05 |
