Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497829 | Semiconductor material doping | Maxim S. Shatalov, Remigijua Gaska, Michael Shur, Alexander Dobrinsky | 2019-12-03 |
| 10490713 | Ultraviolet device encapsulant | Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2019-11-26 |
| 10490697 | Epitaxy technique for growing semiconductor compounds | Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +2 more | 2019-11-26 |
| 10460952 | Stress relieving semiconductor layer | Maxim S. Shatalov, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska | 2019-10-29 |
| 10297460 | Stress relieving semiconductor layer | Maxim S. Shatalov, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska | 2019-05-21 |
| 10276749 | Ultraviolet reflective rough adhesive contact | Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Grigory Simin | 2019-04-30 |
| 10243100 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more | 2019-03-26 |
| 10211048 | Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds | Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more | 2019-02-19 |
| 10199537 | Semiconductor structure with stress-reducing buffer structure | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2019-02-05 |
| 10199536 | Patterned layer design for group III nitride layer growth | Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2019-02-05 |
| 10199535 | Semiconductor structure with stress-reducing buffer structure | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska | 2019-02-05 |
| 10186632 | Deep ultraviolet light emitting diode | Michael Shur, Remigijus Gaska, Alexander Dobrinsky | 2019-01-22 |