Issued Patents 2019
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522666 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Madhur Bobde, Yongping Ding, Xiaotian Zhang, Yueh-Se Ho | 2019-12-31 |
| 10468526 | Self-aligned slotted accumulation-mode field effect transistor (ACCUFET) structure and method | Francois Hebert, Madhur Bobde | 2019-11-05 |
| 10446695 | Planar multi-implanted JFET | Zhongda Li | 2019-10-15 |
| 10439058 | Normally off gallium nitride field effect transistors (FET) | TingGang Zhu | 2019-10-08 |
| 10396158 | Termination structure for nanotube semiconductor devices | Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang | 2019-08-27 |
| 10396215 | Trench vertical JFET with improved threshold voltage control | Peter Alexandrov | 2019-08-27 |
| 10367099 | Trench vertical JFET with ladder termination | Zhongda Li | 2019-07-30 |
| 10367098 | Vertical JFET made using a reduced masked set | Zhongda Li | 2019-07-30 |
| 10333006 | Termination structure for gallium nitride Schottky diode including junction barriar diodes | TingGang Zhu, Ping Huang, Yueh-Se Ho | 2019-06-25 |
| 10192982 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Ji Pan +2 more | 2019-01-29 |
| 10177221 | Integrated Schottky diode in high voltage semiconductor device | Lingpeng Guan, Madhur Bobde, TingGang Zhu | 2019-01-08 |