Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10489947 | Mobile device, application display method, and non-transitory computer readable storage medium | — | 2019-11-26 |
| 10460948 | Stress assisted wet and dry epitaxial lift off | Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2019-10-29 |
| 10460937 | Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films | Stephen W. Bedell, Kunal Mukherjee, John A. Ott, Devendra K. Sadana, Brent A. Wacaser | 2019-10-29 |
| 10453683 | Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films | Stephen W. Bedell, Kunal Mukherjee, John A. Ott, Devendra K. Sadana, Brent A. Wacaser | 2019-10-22 |
| 10439356 | III-V photonic integrated circuits on silicon substrate | Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2019-10-08 |
| 10388522 | Selective epitaxy using epitaxy-prevention layers | Jeehwan Kim, John A. Ott, Devendra K. Sadana | 2019-08-20 |
| 10367060 | III-V semiconductor devices with selective oxidation | Effendi Leobandung, Devendra K. Sadana | 2019-07-30 |
| 10304947 | Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowth | Tze-Chiang Chen, Sanghoon Lee, Effendi Leobandung | 2019-05-28 |
| 10256608 | Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same | Effendi Leobandung, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu | 2019-04-09 |
| 10217659 | Dual isolation fin and method of making | Sanghoon Lee, Effendi Leobandung | 2019-02-26 |
| 10217632 | Integration of III-V compound materials on silicon | Sanghoon Lee, Kuen-Ting Shiu | 2019-02-26 |
| 10205003 | Surface roughness of III-V fin formed on silicon sidewall by implementing sacrificial buffers | Sanghoon Lee, Effendi Leobandung, Renee T. Mo | 2019-02-12 |