Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522676 | Semiconductor device and method of manufacturing semiconductor device | — | 2019-12-31 |
| 10418477 | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | Takeshi Tawara, Shinsuke Harada, Yasunori Tanaka | 2019-09-17 |
| 10403749 | Method of manufacturing semiconductor device | Shinsuke Harada, Yasunori Tanaka | 2019-09-03 |
| 10403713 | Method of manufacturing semiconductor device | Masanobu Iwaya, Shinsuke Harada, Yasunori Tanaka | 2019-09-03 |
| 10396149 | Semiconductor device and method of manufacturing semiconductor device | — | 2019-08-27 |
| 10396161 | Semiconductor device and method of manufacturing semiconductor device | Yuichi Harada, Yasuyuki Hoshi, Yasuhiko Oonishi | 2019-08-27 |
| 10319824 | Semiconductor device includes a substrate having a bandgap wider than that of silicon and method of manufacturing semiconductor device | Makoto Utsumi, Yasuhiko Oonishi | 2019-06-11 |
| 10319820 | Semiconductor device having silicon carbide layer provided on silicon carbide substrate | Yasuyuki Hoshi, Yasuhiko Oonishi, Yuichi Harada | 2019-06-11 |
| 10276709 | Semiconductor device and method of manufacturing semiconductor device | — | 2019-04-30 |
| 10276653 | Semiconductor device and method of manufacturing semiconductor device | Masanobu Iwaya, Shinsuke Harada, Yasunori Tanaka | 2019-04-30 |
| 10269952 | Semiconductor device having steps in a termination region and manufacturing method thereof | — | 2019-04-23 |
| 10263082 | Semiconductor device having a gate electrode formed inside a trench | Makoto Utsumi | 2019-04-16 |
| 10204990 | Semiconductor device and method of manufacturing semiconductor device | Yuichi Harada, Yasuyuki Hoshi, Yasuhiko Oonishi | 2019-02-12 |
| 10199493 | Semiconductor device and method of manufacturing semiconductor device | Shinsuke Harada, Yasunori Tanaka | 2019-02-05 |