| 10497710 |
Split-gate flash cell formed on recessed substrate |
Sung-Taeg Kang, James Pak, Unsoon Kim, Inkuk Kang, Kuo-Tung Chang |
2019-12-03 |
| 10446245 |
Non-volatile memory array with memory gate line and source line scrambling |
Yoram Betser, Kuo-Tung Chang, Amichai Givant, Shivananda Shetty, Shenqing Fang |
2019-10-15 |
| 10403731 |
Memory first process flow and device |
Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2019-09-03 |
| 10242996 |
Method of forming high-voltage transistor with thin gate poly |
James Pak, Unsoon Kim, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang |
2019-03-26 |
| 10236299 |
Three-dimensional charge trapping NAND cell with discrete charge trapping film |
Kuo-Tung Chang, Shenqing Fang |
2019-03-19 |
| 10229745 |
Suppression of program disturb with bit line and select gate voltage regulation |
Kuo-Tung Chang, Yoram Betser, Shivananda Shetty, Giovanni Mazzeo, Tio Wei Neo +1 more |
2019-03-12 |
| 10192627 |
Non-volatile memory array with memory gate line and source line scrambling |
Yoram Betser, Kuo-Tung Chang, Amichai Givant, Shivananda Shetty, Shenqing Fang |
2019-01-29 |
| 10192747 |
Multi-layer inter-gate dielectric structure and method of manufacturing thereof |
Shenqing Fang |
2019-01-29 |
