Issued Patents 2019
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510905 | Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region | Qingchun Zhang, Edward Robert Van Brunt, Brett Hull | 2019-12-17 |
| 10269955 | Vertical FET structure | Sei-Hyung Ryu, Marcelo Schupbach, Adam Barkley | 2019-04-23 |