Issued Patents 2018
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10083906 | Memory device with buried word line for reduced gate-induced drain leakage current and method for manufacturing the same | Wei-Che Chang, Kazutaka Manabe, Kazuaki Takesako, Noriaki Ikeda, Yoshinori Tanaka | 2018-09-25 |