| 10163678 |
Sinker with a reduced width |
Binghua Hu, Guru Mathur, Takehito Tamura |
2018-12-25 |
| 10134830 |
Integrated trench capacitor |
Binghua Hu, Hideaki Kawahara |
2018-11-20 |
| 10134596 |
Recessed solid state apparatuses |
Dong Seup Lee, Yoshikazu Kondo, Pinghai Hao |
2018-11-20 |
| 10121891 |
P-N bimodal transistors |
Yongxi Zhang, Henry Litzmann Edwards |
2018-11-06 |
| 10101382 |
Systems and methods for dynamic Rdson measurement |
Alex Paikin, Colin Johnson, Tathagata Chatterjee |
2018-10-16 |
| 10103258 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Guru Mathur |
2018-10-16 |
| 10062777 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2018-08-28 |
| 10014231 |
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices |
Dong Seup Lee, Jungwoo Joh |
2018-07-03 |
| 9985028 |
Diluted drift layer with variable stripe widths for power transistors |
Yongxi Zhang, Scott Balster |
2018-05-29 |
| 9985095 |
Lateral MOSFET with buried drain extension layer |
Marie Denison, Philip L. Hower |
2018-05-29 |
| 9947784 |
High voltage lateral extended drain MOS transistor with improved drift layer contact |
Philip L. Hower, Marie Denison |
2018-04-17 |
| 9941383 |
Fast switching IGBT with embedded emitter shorting contacts and method for making same |
Jacek Korec, John Manning Savidge Neilson |
2018-04-10 |
| 9899484 |
Transistor with source field plates under gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2018-02-20 |
| 9882041 |
HEMT having conduction barrier between drain fingertip and source |
Jungwoo Joh, Naveen Tipirneni, Chang Soo Suh |
2018-01-30 |
| 9876071 |
Structures to avoid floating RESURF layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +2 more |
2018-01-23 |
| 9865507 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Pinghai Hao, Amitava Chatterjee |
2018-01-09 |
| 9865729 |
Laterally diffused metal oxide semiconductor with segmented gate oxide |
Ming-Yeh Chuang |
2018-01-09 |
| 9865722 |
Avalanche energy handling capable III-nitride transistors |
Naveen Tipirneni |
2018-01-09 |
| 9865691 |
Poly sandwich for deep trench fill |
Binghua Hu, Jarvis Benjamin Jacobs |
2018-01-09 |