Issued Patents 2018
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164185 | RRAM cell with PMOS access transistor | Sheng-Hung Shih, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang +2 more | 2018-12-25 |
| 10163981 | Metal landing method for RRAM technology | Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu, Wen-Ting Chu +1 more | 2018-12-25 |
| 10158070 | Logic compatible RRAM structure and process | Chih-Yang Chang, Chin-Chieh Yang, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao | 2018-12-18 |
| 10158072 | Step height reduction of memory element | Jen-Sheng Yang, Wen-Ting Chu, Chih-Yang Chang, Chin-Chieh Yang, Kuo-Chi Tu +3 more | 2018-12-18 |
| 10103330 | Resistance variable memory structure | Kuo-Chi Tu, Chih-Yang Chang, Yu-Wen Liao, Chin-Chieh Yang, Wen-Ting Chu | 2018-10-16 |
| 10103200 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Chih-Yang Chang, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao | 2018-10-16 |
| 10050197 | Resistance variable memory structure | Kuo-Chi Tu, Chih-Yang Chang, Yu-Wen Liao, Chin-Chieh Yang, Wen-Ting Chu | 2018-08-14 |
| 10038139 | One transistor and one resistive random access memory (RRAM) structure with spacer | Wen-Ting Chu, Kuo-Chi Tu, Chin-Chieh Yang, Chih-Yang Chang, Yu-Wen Liao | 2018-07-31 |
| 10008662 | Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process | Wen-Chun You, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang, Sheng-Hung Shih +2 more | 2018-06-26 |
| 9934853 | Method and apparatus for reading RRAM cell | Chin-Chieh Yang, Chih-Yang Chang, Chang-Sheng Liao, Jen-Sheng Yang, Kuo-Chi Tu +4 more | 2018-04-03 |