Issued Patents 2018
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10157917 | Semiconductor device | Se-Wan Park, Baik-Min Sung, Myung Yoon Um | 2018-12-18 |
| 10103142 | Integrated circuit (IC) devices including stress inducing layers | Sug-Hyun Sung, Gi-gwan Park | 2018-10-16 |
| 10096714 | Integrated circuit device and method of manufacturing the same | Jae-yup Chung, Myung Yoon Um, Dong-Ho Cha, Gi-gwan Park | 2018-10-09 |
| 10083965 | Semiconductor device having fin-type patterns | Ki Hwan Kim, Gi-gwan Park, Dong-Suk Shin, Hyun Yul Choi | 2018-09-25 |
| 10074726 | Fin semiconductor device including dummy gate on isolation layer | Young-Joon Park, Ji-Yong Ha | 2018-09-11 |
| 10038093 | FIN field effect transistors having liners between device isolation layers and active areas of the device | Sug-Hyun Sung, Gi-gwan Park, Ki Il Kim | 2018-07-31 |
| 9991264 | Integrated circuit device and method of manufacturing the same | Ki Il Kim, Gi-gwan Park | 2018-06-05 |
| 9941281 | Semiconductor device | Hyung Jong Lee, Sung Min Kim, Chong-Kwang Chang | 2018-04-10 |
| 9935017 | Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation | Eung-Gwan Kim, Jeong Yun Lee | 2018-04-03 |
| 9899388 | Integrated circuit device and method of manufacturing the same | Ki Il Kim, Gi-gwan Park | 2018-02-20 |
| 9887194 | Semiconductor devices and methods of fabricating the same | Sug-Hyun Sung, Se-Wan Park | 2018-02-06 |
| 9871042 | Semiconductor device having fin-type patterns | Ki Hwan Kim, Gi-gwan Park, Dong-Suk Shin, Hyun Yul Choi | 2018-01-16 |
| 9865736 | Semiconductor devices and methods of manufacturing the same | Chong-Kwang Chang, Young Mook Oh, Hak-Yoon Ahn, Gi-gwan Park, Baik-Min Sung | 2018-01-09 |
| 9865495 | Semiconductor device and method for fabricating the same | Ki Il Kim, Gi-gwan Park, Hyung-Dong Kim, Sug-Hyun Sung, Myung Yoon Um | 2018-01-09 |
| 9859398 | Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patterns | Se-Wan Park, Seung-Woo Do, In Won Park, Sug-Hyun Sung | 2018-01-02 |