| 10134758 |
Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
Hongbin Zhu, Jun Zhao, Purnima Narayanan, Damir Fazil |
2018-11-20 |
| 10090318 |
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure |
Hongbin Zhu, Charles H. Dennison, Merri L. Carlson, John D. Hopkins, Jia Hui Ng +1 more |
2018-10-02 |
| 10083984 |
Integrated structures and methods of forming integrated structures |
Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Yangda Zhang +2 more |
2018-09-25 |
| 10038002 |
Semiconductor devices and methods of fabrication |
Hongbin Zhu, Zhenyu Lu, Jie Sun, Randy J. Koval, John D. Hopkins |
2018-07-31 |
| 10002767 |
Aluminum oxide landing layer for conductive channels for a three dimensional circuit device |
Hongbin Zhu, Fatma Arzum Simsek-Ege |
2018-06-19 |
| 9935120 |
Methods of fabricating integrated structures |
John Mark Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu +1 more |
2018-04-03 |
| 9857989 |
Solid state memory component |
Jun Zhao, Gowrisankar Damarla, David Daycock, Sri Sai Sivakumar Vegunta, John B. Matovu +2 more |
2018-01-02 |
