Issued Patents 2018
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121799 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Kunal Shrotri, Anish A. Khandekar, John D. Hopkins +1 more | 2018-11-06 |
| 9893083 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Kunal Shrotri, Anish A. Khandekar, John D. Hopkins +1 more | 2018-02-13 |