Issued Patents 2018
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10120287 | Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone | Roland Rupp, Rudolf Elpelt | 2018-11-06 |
| 10074741 | Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region | Thomas Aichinger, Dethard Peters, Roland Rupp, Ralf Siemieniec | 2018-09-11 |
| 10049879 | Self aligned silicon carbide contact formation using protective layer | Ravi Keshav Joshi, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg | 2018-08-14 |
| 10038087 | Semiconductor device and transistor cell having a diode region | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2018-07-31 |
| 9997515 | Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice | Roland Rupp, Dethard Peters | 2018-06-12 |
| 9960230 | Silicon-carbide transistor device with a shielded gate | Dethard Peters, Wolfgang Bergner, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck | 2018-05-01 |
| 9941272 | Method of producing a semiconductor device | Ralf Siemieniec, Dethard Peters | 2018-04-10 |
| 9934972 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Wolfgang Bergner, Daniel Kueck, Dethard Peters, Victorina Poenariu +3 more | 2018-04-03 |
| 9917170 | Carbon based contact structure for silicon carbide device technical field | Ravi Keshav Joshi, Markus Kahn, Gerald Unegg | 2018-03-13 |
| 9876103 | Semiconductor device and transistor cell having a diode region | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2018-01-23 |