Issued Patents 2018
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9984894 | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions | Sei-Hyung Ryu, Anant Agarwal, John R. Williams | 2018-05-29 |
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9984894 | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions | Sei-Hyung Ryu, Anant Agarwal, John R. Williams | 2018-05-29 |