Issued Patents 2018
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10147818 | Enhanced method of stressing a transistor channel zone | Benoit Mathieu | 2018-12-04 |
| 10147788 | Process for fabricating a field effect transistor having a coating gate | Emmanuel Augendre, Remi Coquand | 2018-12-04 |
| 10141424 | Method of producing a channel structure formed from a plurality of strained semiconductor bars | Remi Coquand, Emmanuel Augendre, Nicolas Loubet | 2018-11-27 |
| 10134875 | Method for fabricating a transistor having a vertical channel having nano layers | Emmanuel Augendre, Remi Coquand | 2018-11-20 |
| 10115590 | Manufacturing of silicon strained in tension on insulator by amorphisation then recrystallisation | Aurore Bonneviaille | 2018-10-30 |
| 10109735 | Process for fabricating a field effect transistor having a coating gate | Remi Coquand, Emmanuel Augendre | 2018-10-23 |
| 10096694 | Process for fabricating a vertical-channel nanolayer transistor | Remi Coquand, Emmanuel Augendre | 2018-10-09 |
| 10014183 | Method for patterning a thin film | Laurent Grenouillet, Yves Morand | 2018-07-03 |
| 9966453 | Method for doping source and drain regions of a transistor by means of selective amorphisation | Perrine Batude, Frédéric Mazen, Benoit Sklenard | 2018-05-08 |
| 9935019 | Method of fabricating a transistor channel structure with uniaxial strain | Laurent Grenouillet, Frederic Milesi, Yves Morand, Francois Rieutord | 2018-04-03 |
| 9899217 | Method for producing a strained semiconductor on insulator substrate | Yves Morand, Hubert Moriceau | 2018-02-20 |
| 9876121 | Method for making a transistor in a stack of superimposed semiconductor layers | Sylvain Barraud, Maud Vinet | 2018-01-23 |