Issued Patents 2017
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9822468 | Method for producing SiC single crystal | Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki SEKI, Yutaka Kishida | 2017-11-21 |
| 9783911 | Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus | Nobuyoshi Yashiro, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuhiro Okada, Koji Moriguchi +2 more | 2017-10-10 |
| 9732441 | Production apparatus and production method of SiC single crystal | Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Nobuhiro Okada, Motohisa Kado +1 more | 2017-08-15 |
| 9708734 | Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution | Hidemitsu Sakamoto, Motohisa Kado, Kazuhiko Kusunoki | 2017-07-18 |
| 9702056 | Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus | Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Nobuhiro Okada, Motohisa Kado +1 more | 2017-07-11 |
| 9631295 | Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method | Kazuhito Kamei | 2017-04-25 |
| 9624599 | SiC single crystal manufacturing method using alternating states of supersaturation | Motohisa Kado, Kazuhiko Kusunoki | 2017-04-18 |
| 9617655 | Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal | Nobuhiro Okada, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Kouji Moriguchi +5 more | 2017-04-11 |