YC

Yung-Jung Chang

TSMC: 9 patents #193 of 2,832Top 7%
📍 Zhumaoya, TW: #2 of 12 inventorsTop 20%
Overall (2017): #7,967 of 506,227Top 2%
9
Patents 2017

Issued Patents 2017

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
9853154 Embedded source or drain region of transistor with downward tapered region under facet region Che-Cheng Chang, Tung-Wen Cheng, Zhe Zhang 2017-12-26
9773696 Semiconductor structure and manufacturing method thereof Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin 2017-09-26
9735256 Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features Che-Cheng Chang, Chih-Han Lin, Jr-Jung Lin, Shih-Hao Chen, Mu-Tsang Lin 2017-08-15
9660052 Strained source and drain (SSD) structure and method for forming the same Che-Cheng Chang, Tung-Wen Cheng, Yi-Jen Chen 2017-05-23
9653605 Fin field effect transistor (FinFET) device and method for forming the same Zhe Zhang, Tung-Wen Cheng, Chang-Yin Chen, Che-Cheng Chang 2017-05-16
9627375 Indented gate end of non-planar transistor Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yi-Jen Chen 2017-04-18
9620621 Gate structure of field effect transistor with footing Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin 2017-04-11
9608113 Semiconductor device structure Che-Cheng Chang, Yi-Jen Chen 2017-03-28
9553171 Fin field effect transistor (FinFET) device and method for forming the same Che-Cheng Chang 2017-01-24