Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691871 | Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride | Florian Domengie, Carlos Augusto SUAREZ SEGOVIA, Aurelie Bajolet, Onintza Ros Bengoechea | 2017-06-27 |
| 9536599 | Optoelectronic device, in particular memory device | Mickael Gros-Jean | 2017-01-03 |