Issued Patents 2017
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9601381 | Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path | Nicolas Loubet, Stephane Monfray | 2017-03-21 |
| 9601382 | Method for the formation of a FinFET device with epitaxially grown source-drain regions having a reduced leakage path | Stephane Monfray, Nicolas Loubet | 2017-03-21 |