HG

Hans-Joachim L. Gossmann

Applied Materials: 1 patents #426 of 996Top 45%
VA Varian Semiconductor Equipment Associates: 1 patents #54 of 139Top 40%
📍 Summit, NJ: #20 of 63 inventorsTop 35%
🗺 New Jersey: #1,279 of 7,092 inventorsTop 20%
Overall (2017): #150,095 of 506,227Top 30%
2
Patents 2017

Issued Patents 2017

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
9853129 Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth Matthias Bauer, Benjamin Colombeau 2017-12-26
9748364 Method for fabricating three dimensional device Shiyu Sun, Naomi Yoshida, Benjamin Colombeau 2017-08-29