Issued Patents 2017
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9837527 | Semiconductor device with a trench electrode | Wolfgang Bergner, Romain Esteve, Dethard Peters | 2017-12-05 |
| 9818827 | Field plate trench semiconductor device with planar gate | Franz Hirler | 2017-11-14 |
| 9812563 | Transistor with field electrodes and improved avalanche breakdown behavior | Markus Zundel, Karl-Heinz Bach, Franz Hirler, Christian Kampen, Werner Schustereder | 2017-11-07 |
| 9799738 | Semiconductor device with field electrode and contact structure | Oliver Blank, Michael Hutzler, David Laforet, Cedric Ouvrard, Li Juin Yip | 2017-10-24 |
| 9799729 | Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Oliver Blank, Franz Hirler, Martin Vielemeyer | 2017-10-24 |
| 9793387 | Semiconductor device including a vertical PN junction between a body region and a drift region | Michael Hutzler, Georg Ehrentraut, Matthias Kuenle | 2017-10-17 |
| 9768290 | Semiconductor device with metal-filled groove in polysilicon gate electrode | Oliver Blank, Li Juin Yip | 2017-09-19 |
| 9728614 | Semiconductor device comprising a field electrode | David Laforet, Oliver Blank, Franz Hirler | 2017-08-08 |
| 9722036 | Semiconductor device with field electrode structure | Franz Hirler, Oliver Blank | 2017-08-01 |
| 9711660 | JFET and method of manufacturing thereof | Jens Peter Konrath, Hans-Joachim Schulze, Cedric Ouvrard | 2017-07-18 |
| 9680004 | Power MOSFET with seperate gate and field plate trenches | David Laforet, Oliver Blank, Michael Hutzler, Cedric Ouvrard, Li Juin Yip | 2017-06-13 |
| 9653598 | Transistor component | Michael Hutzler | 2017-05-16 |
| 9627520 | MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array | Franz Hirler, Christian Geissler, Oliver Blank, Maximilian Roesch | 2017-04-18 |
| 9620636 | Semiconductor device with field electrode structures in a cell area and termination structures in an edge area | Oliver Blank, Franz Hirler, Michael Hutzler, Martin Poelzl | 2017-04-11 |
| 9577073 | Method of forming a silicon-carbide device with a shielded gate | Romain Esteve, Dethard Peters, Wolfgang Bergner, Thomas Aichinger, Daniel Kueck | 2017-02-21 |
| 9570438 | Avalanche-rugged quasi-vertical HEMT | Gilberto Curatola | 2017-02-14 |
| 9570553 | Semiconductor chip with integrated series resistances | Gerhard Noebauer, Maximilian Roesch, Martin Poelzl, Michael Hutzler | 2017-02-14 |
| 9543386 | Semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Oliver Blank, Franz Hirler, Martin Vielemeyer | 2017-01-10 |
| 9536960 | Semiconductor device comprising a field electrode | David Laforet, Franz Hirler, Oliver Blank | 2017-01-03 |