Issued Patents 2017
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852945 | Method of manufacturing a semiconductor device having a cell field portion and a contact area | Till Schloesser, Martin Poelzl | 2017-12-26 |
| 9853637 | Dual gate switch device | Anton Mauder, Jens Barrenscheen | 2017-12-26 |
| 9825170 | Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device | Franz Hirler, Till Schloesser | 2017-11-21 |
| 9825148 | Semiconductor device comprising an isolation trench | Till Schloesser, Thorsten Meyer | 2017-11-21 |
| 9806188 | Method for producing a controllable semiconductor component having trenches with different widths and depths | Markus Zundel | 2017-10-31 |
| 9799762 | Semiconductor device and method of manufacturing a semiconductor device | Till Schloesser | 2017-10-24 |
| 9748378 | Semiconductor device, integrated circuit and method of manufacturing a semiconductor device | Karoline Koepp, Till Schloesser | 2017-08-29 |
| 9735243 | Semiconductor device, integrated circuit and method of forming a semiconductor device | Rolf Weis, Franz Hirler, Martin Vielemeyer, Markus Zundel, Peter Irsigler | 2017-08-15 |
| 9728580 | Power transistor with integrated temperature sensor element, power transistor circuit, method for operating a power transistor, and method for operating a power transistor circuit | Steffen Thiele | 2017-08-08 |
| 9705026 | Method of triggering avalanche breakdown in a semiconductor device | Joost Adriaan Willemen, Michael Mayerhofer, Ulrich Glaser, Yiqun Cao, Magnus-Maria Hell +2 more | 2017-07-11 |
| 9673320 | Transistor with improved avalanche breakdown behavior | Till Schloesser | 2017-06-06 |
| 9661707 | Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit | Till Schloesser | 2017-05-23 |
| 9660055 | Method of manufacturing a semiconductor device with lateral FET cells and field plates | Martin Poelzl, Till Schloesser | 2017-05-23 |
| 9634101 | Semiconductor component with a monocrystalline semiconductor region arranged in a via region | Franz Hirler | 2017-04-25 |
| 9620637 | Semiconductor device comprising a gate electrode connected to a source terminal | Till Schloesser, Franz Hirler | 2017-04-11 |
| 9614032 | Semiconductor device, integrated circuit and method for manufacturing the semiconductor device | Till Schloesser | 2017-04-04 |
| 9614064 | Semiconductor device and integrated circuit | — | 2017-04-04 |
| 9608070 | Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device | Till Schloesser | 2017-03-28 |
| 9570576 | Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation | Anton Mauder, Markus Zundel, Hans-Joachim Schulze, Franz Hirler, Hans Weber | 2017-02-14 |
| 9558933 | Method for forming a semiconductor device | Hans-Joachim Schulze, Markus Zundel, Anton Mauder, Franz Hirler, Hans Weber | 2017-01-31 |