Issued Patents 2017
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9580837 | Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material | Varatharajan Rengarajan, Bryan K. Brouhard, Michael C. Nolan, Thomas E. Anderson | 2017-02-28 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta, Varatharajan Rengarajan +2 more | 2017-02-21 |