NF

Natalie B. Feilchenfeld

Globalfoundries: 4 patents #123 of 1,311Top 10%
📍 Jericho, VT: #6 of 27 inventorsTop 25%
🗺 Vermont: #68 of 583 inventorsTop 15%
Overall (2017): #40,824 of 506,227Top 9%
4
Patents 2017

Issued Patents 2017

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
9799652 Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure Michael J. Zierak, Theodore Letavic, Yun Shi, Santosh Sharma 2017-10-24
9786606 Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method BethAnn Lawrence, Yun Shi 2017-10-10
9768028 Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure Michael J. Zierak, Theodore Letavic, Yun Shi, Santosh Sharma 2017-09-19
9595579 Dual shallow trench isolation (STI) structure for field effect transistor (FET) Max G. Levy, Richard A. Phelps, Santosh Sharma, Yun Shi, Michael J. Zierak 2017-03-14