GH

Guohan Hu

IBM: 10 patents #443 of 10,852Top 5%
Samsung: 1 patents #6,542 of 15,326Top 45%
Overall (2017): #7,507 of 506,227Top 2%
10
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9853208 In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions Daniel C. Worledge 2017-12-26
9799826 Current constriction for spin torque MRAM Daniel C. Worledge 2017-10-24
9799823 High temperature endurable MTJ stack Kwangseok KIM, Younghyun Kim, Junghyuk Lee, Luqiao Liu, Jeong-Heon Park 2017-10-24
9773971 Perpendicular magnetic anisotropy BCC multilayers Daniel C. Worledge 2017-09-26
9715917 Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer Luqiao Liu, Jonathan Zanhong Sun, Daniel C. Worledge 2017-07-25
9660180 Current constriction for spin torque MRAM Daniel C. Worledge 2017-05-23
9647204 Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer Luqiao Liu, Jonathan Zanhong Sun, Daniel C. Worledge 2017-05-09
9620708 Perpendicular magnetic anisotropy BCC multilayers Daniel C. Worledge 2017-04-11
9564580 Double synthetic antiferromagnet using rare earth metals and transition metals Daniel C. Worledge 2017-02-07
9537090 Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory 2017-01-03