Issued Patents 2017
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9793929 | Data packing for compression-enabled storage systems | Charles J. Camp, Timothy J. Fisher, Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell | 2017-10-17 |
| 9734012 | Data encoding in solid-state storage devices | Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell | 2017-08-15 |
| 9734010 | Data encoding in solid-state storage apparatus | Thomas Mittelholzer, Nikolaos Papandreou | 2017-08-15 |
| 9710199 | Non-volatile memory data storage with low read amplification | Nikolas Ioannou, Ioannis Koltsidas, Thomas Mittelholzer, Thomas Parnell, Roman A. Pletka +1 more | 2017-07-18 |
| 9712190 | Data packing for compression-enabled storage systems | Charles J. Camp, Timothy J. Fisher, Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell | 2017-07-18 |
| 9672910 | Memory architecture for storing data in a plurality of memory chips | Theodore Antonakopoulos, Nikolaos Papandreou | 2017-06-06 |
| 9672921 | Device and method for storing data in a plurality of multi-level cell memory chips | Tobias Blaettler, Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell, Milos Stanisavljevic | 2017-06-06 |
| 9666273 | Determining a cell state of a resistive memory cell | Nikolaos Papandreou, Milos Stanisavljevic | 2017-05-30 |
| 9653185 | Reducing error correction latency in a data storage system having lossy storage media | Charles J. Camp, Evangelos S. Eleftheriou, Gary A. Tressler, Andrew D. Walls | 2017-05-16 |
| 9647694 | Diagonal anti-diagonal memory structure | Tobias Blaettler, Charles J. Camp, Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell | 2017-05-09 |
| 9639462 | Device for selecting a level for at least one read voltage | Charles J. Camp, Evangelos S. Eleftheriou, Thomas Mittelholzer, Thomas Parnell, Nikolaos Papandreou +1 more | 2017-05-02 |
| 9619328 | Read-detection in multi-level cell memory | Thomas Mittelholzer, Nikolaos Papandreou | 2017-04-11 |
| 9588702 | Adapting erase cycle parameters to promote endurance of a memory | Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell, Gary A. Tressler | 2017-03-07 |
| 9583205 | Background threshold voltage shifting using base and delta threshold voltage shift values in non-volatile memory | Charles J. Camp, Timothy J. Fisher, Aaron D. Fry, Nikolas Ioannou, Ioannis Koltsidas +4 more | 2017-02-28 |
| 9583184 | Estimation of level-thresholds for memory cells | Thomas Mittelholzer, Nikolaos Papandreou, Thomas Parnell, Milos Stanisavljevic | 2017-02-28 |
| 9576650 | Read measurement of a plurality of resistive memory cells for alleviating resistance and current drift | Abu Sebastian, Nikolaos Papandreou | 2017-02-21 |
| 9558817 | Conditioning phase change memory cells | Nikolaos Papandreou | 2017-01-31 |
| 9558107 | Extending useful life of a non-volatile memory by health grading | Charles J. Camp, Ioannis Koltsidas, Nikolaos Papandreou, Thomas Parnell, Roman A. Pletka +2 more | 2017-01-31 |