Issued Patents 2017
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818863 | Integrated breakdown protection | Weize Chen, Hubert M. Bode, Richard J. De Souza | 2017-11-14 |
| 9780558 | Semiconductor device and related protection methods | Weize Chen, Richard J. De Souza, Mazhar Ul Hoque | 2017-10-03 |
| 9741793 | Semiconductor device with false drain | Weize Chen | 2017-08-22 |
| 9704853 | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof | Hubert M. Bode, Weize Chen, Richard J. De Souza | 2017-07-11 |
| 9673188 | Integrated electrostatic discharge (ESD) clamping for an LDMOS transistor device having a bipolar transistor | Weize Chen | 2017-06-06 |
| 9620496 | Stacked protection devices with overshoot protection and related fabrication methods | Weize Chen, Hubert M. Bode, Andreas Laudenbach, Kurt U. Neugebauer | 2017-04-11 |
| 9607981 | Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof | Weize Chen, Hubert M. Bode, Richard J. De Souza | 2017-03-28 |
| 9599587 | Methods and apparatus for an ISFET | Weize Chen, Richard J. De Souza, Md M. Hoque, John M. McKenna | 2017-03-21 |
| 9570440 | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof | Weize Chen, Hubert M. Bode, Richard J. De Souza | 2017-02-14 |
| 9559097 | Semiconductor device with non-isolated power transistor with integrated diode protection | Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer | 2017-01-31 |
| 9553187 | Semiconductor device and related fabrication methods | Weize Chen, Richard J. De Souza, Mazhar Ul Hoque | 2017-01-24 |
| 9541521 | Enhanced sensitivity ion sensing devices | Md M. Hoque, Weize Chen | 2017-01-10 |
| 9537000 | Semiconductor device with increased safe operating area | Weize Chen | 2017-01-03 |