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Partially biased isolation in semiconductor devices |
Hongning Yang, Xu Cheng, Xin Lin, Zhihong Zhang, Jiang-Kai Zuo |
2017-08-08 |
| 9680011 |
Self-adjusted isolation bias in semiconductor devices |
Zhihong Zhang, Xu Cheng, Xin Lin, Hongning Yang, Jiang-Kai Zuo |
2017-06-13 |
| 9647082 |
Diodes with multiple junctions |
Xin Lin, Hongning Yang, Jiang-Kai Zuo |
2017-05-09 |
| 9640635 |
Reliability in mergeable semiconductor devices |
Zhihong Zhang, Hongning Yang, Jiang-Kai Zuo |
2017-05-02 |
| 9601595 |
High breakdown voltage LDMOS device |
Hongning Yang, Jiang-Kai Zuo |
2017-03-21 |
| 9601564 |
Deep trench isolation |
Xu Cheng, Zhihong Zhang, Jiang-Kai Zuo |
2017-03-21 |
| 9590097 |
Semiconductor devices and related fabrication methods |
Hongning Yang, Xin Lin, Zhihong Zhang, Jiang-Kai Zuo |
2017-03-07 |
| 9570548 |
Deep trench isolation structures and systems and methods including the same |
Xu Cheng, Jiang-Kai Zuo |
2017-02-14 |
| 9543454 |
Diodes with multiple junctions |
Xin Lin, Hongning Yang, Jiang-Kai Zuo |
2017-01-10 |