NP

Nicolas Posseme

CEA: 11 patents #1 of 1,002Top 1%
CN CNRS: 1 patents #109 of 1,210Top 10%
SS Stmicroelectronics (Crolles 2) Sas: 1 patents #33 of 110Top 30%
SS Stmicroelectronics Sa: 1 patents #167 of 523Top 35%
Applied Materials: 1 patents #426 of 996Top 45%
UF Université Joseph Fourier: 1 patents #1 of 27Top 4%
Overall (2017): #4,703 of 506,227Top 1%
12
Patents 2017

Issued Patents 2017

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
9853124 Method for fabricating a nanowire semiconductor transistor having an auto-aligned gate and spacers Sylvain Barraud, Emmanuel Augendre, Sylvain Maitrejean 2017-12-26
9805948 Selective etching process of a mask disposed on a silicon substrate 2017-10-31
9780191 Method of forming spacers for a gate of a transistor 2017-10-03
9780000 Method for forming spacers for a transitor gate Maxime Garcia-Barros 2017-10-03
9773674 Method for forming patterns by implanting 2017-09-26
9698250 Method for the surface etching of a three-dimensional structure Christian Arvet, Sebastien Barnola 2017-07-04
9679802 Method of etching a porous dielectric material 2017-06-13
9607840 Method for forming spacers for a transistor gate 2017-03-28
9607823 Protection method for protecting a silicide layer 2017-03-28
9583339 Method for forming spacers for a transistor gate Thibaut David, Olivier Joubert, Thorsten Lill, Srinivas D. Nemani, Laurent Vallier 2017-02-28
9570317 Microelectronic method for etching a layer Olivier Joubert, Laurent Vallier 2017-02-14
9543409 Production of spacers at flanks of a transistor gate Christian Arvet, Sebastien Barnola, Sebastien Lagrasta 2017-01-10