Issued Patents 2017
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9607838 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2017-03-28 |
| 9553172 | Method and structure for FinFET devices | Chia-Wei Soong, Hou-Yu Chen | 2017-01-24 |