Issued Patents 2016
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9362370 | Silicon carbide semiconductor device having nitrogen-containing silicon alloy for ohmic contact to P-type impurity region | Tsutomu Kiyosawa, Takayuki Wakayama | 2016-06-07 |
| 9318600 | Silicon carbide semiconductor device and method for manufacturing same | — | 2016-04-19 |
| 9269765 | Semiconductor device having gate wire disposed on roughened field insulating film | — | 2016-02-23 |