| 9530842 |
Semiconductor devices |
Shu Qin, Allen McTeer |
2016-12-27 |
| 9496495 |
Memory cells and methods of forming memory cells |
Martin F. Schubert, Shu Qin, Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Allen McTeer |
2016-11-15 |
| 9472663 |
N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors |
Allen McTeer |
2016-10-18 |
| 9437604 |
Methods and apparatuses having strings of memory cells including a metal source |
Zhenyu Lu, Roger W. Lindsay, Andrew Bicksler, Haitao Liu |
2016-09-06 |
| 9419212 |
Barrier film techniques and configurations for phase-change memory elements |
Christopher W. Petz, Dale W. Collins, Allen McTeer |
2016-08-16 |
| 9396952 |
Methods of forming transistor gates |
— |
2016-07-19 |
| 9385317 |
Memory cells and methods of forming memory cells |
Martin F. Schubert, Shu Qin, Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Allen McTeer |
2016-07-05 |
| 9306159 |
Phase change memory stack with treated sidewalls |
Tsz W. Chan, Swapnil Lengade, Shu Qin, Everett A. McTeer |
2016-04-05 |
| 9299767 |
Source-channel interaction in 3D circuit |
John Mark Meldrim, Yushi Hu, Everett A. McTeer |
2016-03-29 |
| 9281471 |
Phase change memory stack with treated sidewalls |
Tsz W. Chan, Swapnil Lengade, Everett A. McTeer, Shu Qin |
2016-03-08 |
| 9257646 |
Methods of forming memory cells having regions containing one or both of carbon and boron |
Martin F. Schubert, Shu Qin, Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Allen McTeer |
2016-02-09 |
| 9249498 |
Forming memory using high power impulse magnetron sputtering |
Everett A. McTeer, John Smythe, Gurtej S. Sandhu |
2016-02-02 |
