Issued Patents 2016
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9245997 | Method of fabricating a LDMOS device having a first well depth less than a second well depth | Francois Hebert, I-Shan Sun, Young Bae Kim, Young Ju Kim, Kwang-Il Kim +1 more | 2016-01-26 |