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Noritaka Nakayama

KT Kabushiki Kaisha Toshiba: 1 patents #1,177 of 2,918Top 45%
TC Toshiba Materials Co.: 1 patents #13 of 45Top 30%
Overall (2016): #275,144 of 481,213Top 60%
1
Patents 2016

Issued Patents 2016

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
9356101 Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same Hiroshi Komorita, Kentaro Takanami 2016-05-31