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Charge pumps with improved latchup characteristics |
Ulrich Loibl |
2016-12-27 |
| 9520161 |
Methods for calculating and determining reference values for semiconductor memory cells |
Michael Goessel, Karl Hofmann |
2016-12-13 |
| 9489994 |
Memory timing circuit |
Mihail Jefremow, Ulrich Backhausen |
2016-11-08 |
| 9460759 |
Sense amplifier of a memory cell |
Mihail Jefremow |
2016-10-04 |
| 9450613 |
Apparatus and method for error correction and error detection |
Ulrich Backhausen, Thomas Rabenalt, Michael Goessel, Klaus Oberlaender, Christian Badack |
2016-09-20 |
| 9405618 |
Marker programming in non-volatile memories |
Thomas Rabenalt, Ulrich Backhausen, Michael Goessel |
2016-08-02 |
| 9389999 |
System and method for emulating an EEPROM in a non-volatile memory device |
Jens Rosenbusch, Ulrich Backhausen, Edvin Paparisto, Thomas Nirschl |
2016-07-12 |
| 9362953 |
Efficient error correction of multi-bit errors |
Michael Goessel, Christian Badack |
2016-06-07 |
| 9343179 |
Word line address scan |
Thomas Nirschl, Jens Rosenbusch, Ulrich Backhausen, Thomas Liebermann |
2016-05-17 |
| 9281032 |
Memory timing circuit |
Mihail Jefremow, Ulrich Backhausen |
2016-03-08 |
| 9251864 |
System and method for providing voltage supply protection in a memory device |
Jan Otterstedt, Wolf Allers, Mihail Jefremow, Edvin Paparisto, Leonardo Castro |
2016-02-02 |
