| 9490025 |
Methods of programming memory devices |
Andrew Bicksler, Violante Moschiano, Giuseppina Puzzilli |
2016-11-08 |
| 9484101 |
Methods of programming memories |
Pranav Kalavade, Tommaso Vali, Violante Moschiano |
2016-11-01 |
| 9484100 |
Memory devices having source lines directly coupled to body regions and methods |
— |
2016-11-01 |
| 9455042 |
Programming methods and memories |
Yijie Zhao |
2016-09-27 |
| 9437608 |
Vertical memory cell string with dielectric in a portion of the body |
Haitao Liu, Chandra Mouli, Krishna K. Parat |
2016-09-06 |
| 9437304 |
Memory devices and programming memory arrays thereof |
Haitao Liu, Krishna K. Parat |
2016-09-06 |
| 9424936 |
Current leakage reduction in 3D NAND memory |
Toru Tanzawa, Shigekazu Yamada, Hiroyuki Sanda |
2016-08-23 |
| 9378839 |
Apparatus and methods including source gates |
Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat |
2016-06-28 |
| 9362300 |
Apparatuses and methods for forming multiple decks of memory cells |
Zhenyu Lu, Roger W. Lindsay, John D. Hopkins |
2016-06-07 |
| 9343316 |
Methods of forming memory cells with air gaps and other low dielectric constant materials |
Minsoo Lee |
2016-05-17 |
| 9330777 |
Memory program disturb reduction |
Mark A. Helm, Pranav Kalavade, Charan Srinivasan |
2016-05-03 |
| 9305654 |
Erase and soft program for vertical NAND flash |
Krishna K. Parat, Pranav Kalavade, Koichi Kawai |
2016-04-05 |
| 9281073 |
Methods of operating a memory device having a buried boosting plate |
— |
2016-03-08 |
| 9251907 |
Memory devices and methods of operating memory devices including applying a potential to a source and a select gate between the source and a string of memory cells while performing a program operation on a memory cell in the string |
Yijie Zhao, Krishna K. Parat |
2016-02-02 |
| 9230666 |
Drain select gate voltage management |
Pranav Kalavade, Doyle Rivers |
2016-01-05 |