| 9530877 |
Enhancement mode III-nitride transistor |
— |
2016-12-27 |
| 9525052 |
Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body |
— |
2016-12-20 |
| 9502398 |
Composite device with integrated diode |
— |
2016-11-22 |
| 9502296 |
Preventing delamination and cracks in fabrication of group III-V devices |
— |
2016-11-22 |
| 9490172 |
Method for preventing delamination and cracks in group III-V wafers |
— |
2016-11-08 |
| 9461463 |
DC/DC converter with III-nitride switches |
Jason Zhang, Bo Yang |
2016-10-04 |
| 9449899 |
Semiconductor package with heat spreader |
Chuan Cheah, Kunzhong Hu |
2016-09-20 |
| 9437685 |
Group III-V device with a selectively reduced impurity concentration |
— |
2016-09-06 |
| 9406674 |
Integrated III-nitride D-mode HFET with cascoded pair half bridge |
— |
2016-08-02 |
| 9379231 |
Transistor having increased breakdown voltage |
Naresh Thapar, Reenu Garg |
2016-06-28 |
| 9378965 |
Highly conductive source/drain contacts in III-nitride transistors |
— |
2016-06-28 |
| 9362267 |
Group III-V and group IV composite switch |
Tim McDonald |
2016-06-07 |
| 9349715 |
Depletion mode group III-V transistor with high voltage group IV enable switch |
— |
2016-05-24 |
| 9343562 |
Dual-gated group III-V merged transistor |
— |
2016-05-17 |
| 9343440 |
Stacked composite device including a group III-V transistor and a group IV vertical transistor |
Tim McDonald |
2016-05-17 |
| 9318592 |
Active area shaping of III-nitride devices utilizing a source-side field plate and a wider drain-side field plate |
— |
2016-04-19 |
| 9312374 |
Integrated power device with III-nitride half bridges |
— |
2016-04-12 |
| 9312375 |
III-Nitride device with solderable front metal |
Chuan Cheah |
2016-04-12 |
| 9281388 |
Composite semiconductor device with a SOI substrate having an integrated diode |
— |
2016-03-08 |
| 9281387 |
High voltage durability III-nitride device |
— |
2016-03-08 |
| 9252256 |
III-nitride semiconductor device with reduced electric field |
— |
2016-02-02 |
| 9252257 |
III-nitride semiconductor device with reduced electric field between gate and drain |
— |
2016-02-02 |
| 9236462 |
Programmable gate III-nitride power transistor |
— |
2016-01-12 |
