Issued Patents 2016
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299926 | Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element | Imran Hashim, Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2016-03-29 |
| 9276210 | Conductive barriers for ternary nitride thin-film resistors | — | 2016-03-01 |
| 9243321 | Ternary metal nitride formation by annealing constituent layers | — | 2016-01-26 |
| 9231203 | Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells | Milind Weling | 2016-01-05 |