Issued Patents 2016
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9496339 | Semiconductor device comprising trench structures | Minghao Jin, Rudolf Rothmaler, Joerg Ortner | 2016-11-15 |
| 9478639 | Electrode-aligned selective epitaxy method for vertical power devices | Minghao Jin, Rudolf Rothmaler, Johannes Baumgartl | 2016-10-25 |
| 9450062 | Semiconductor device having polysilicon plugs with silicide crystallites | Michael Hutzler, Ralf Siemieniec | 2016-09-20 |
| 9443972 | Semiconductor device with field electrode | — | 2016-09-13 |
| 9443973 | Semiconductor device with charge compensation region underneath gate trench | Minghao Jin, Li Juin Yip, Martin Vielemeyer, Franz Hirler | 2016-09-13 |
| 9425788 | Current sensors and methods of improving accuracy thereof | Minghao Jin, Quaglino Roberto | 2016-08-23 |
| 9406763 | Stress-reduced field-effect semiconductor device and method for forming therefor | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder +2 more | 2016-08-02 |
| 9356141 | Semiconductor device having peripheral trench structures | Andrew Christopher Graeme Wood, Martin Poelzl, Martin Vielemeyer | 2016-05-31 |
| 9324823 | Semiconductor device having a tapered gate structure and method | Rudolf Rothmaler, Christof Altstaetter, Minghao Jin | 2016-04-26 |
| 9324817 | Method for forming a transistor device having a field electrode | Ralf Siemieniec | 2016-04-26 |
| 9252251 | Semiconductor component with a space saving edge structure | Franz Hirler, Ralf Siemieniec, Christian Geissler, Maximilian Roesch | 2016-02-02 |