FH

Fu-Yuan Hsieh

FC Force Mos Technology Co.: 5 patents #1 of 1Top 100%
📍 New Taipei, TW: #89 of 2,260 inventorsTop 4%
Overall (2016): #28,936 of 481,213Top 7%
5
Patents 2016

Issued Patents 2016

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
9530867 Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench 2016-12-27
9530882 Trench MOSFET with shielded gate and diffused drift region 2016-12-27
9412810 Super-junction trench MOSFETs with closed cell layout having shielded gate 2016-08-09
9337328 Super-junction trench MOSFETs with closed cell layout 2016-05-10
9293527 Super-junction trench MOSFET structure 2016-03-22