Issued Patents 2016
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9525035 | Vertical high-voltage MOS transistor and method of forming the same | Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara | 2016-12-20 |
| 9496388 | Trench MOSFET having reduced gate charge | Thomas E. Grebs, Touhidur Rahman | 2016-11-15 |
| 9484450 | Integrated channel diode | Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara | 2016-11-01 |
| 9450082 | Integrated termination for multiple trench field plate | Hideaki Kawahara, Simon John Molloy, Jayhoon CHUNG, John Manning Savidge Neilson | 2016-09-20 |
| 9385216 | Monolithically integrated active snubber | — | 2016-07-05 |
| 9368587 | Accumulation-mode field effect transistor with improved current capability | Praveen Muraleedharan Shenoy | 2016-06-14 |
| 9356133 | Medium voltage MOSFET device | Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson | 2016-05-31 |
| 9324856 | MOSFET having dual-gate cells with an integrated channel diode | John Manning Savidge Neilson | 2016-04-26 |
| 9318598 | Trench MOSFET having reduced gate charge | Thomas E. Grebs, Touhidur Rahman | 2016-04-19 |
| 9299830 | Multiple shielding trench gate fet | Hideaki Kawahara, Seetharaman Sridhar, Simon John Molloy, Hong-Seon Yang | 2016-03-29 |
| 9245994 | MOSFET with curved trench feature coupling termination trench to active trench | Hideaki Kawahara, Simon John Molloy, John Manning Savidge Neilson | 2016-01-26 |
| 9230851 | Reduction of polysilicon residue in a trench for polysilicon trench filling processes | Simon John Molloy, John Manning Savidge Neilson, Hong-Seon Yang, Seetharaman Sridhar, Hideaki Kawahara | 2016-01-05 |