Issued Patents 2011
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084763 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, Steven P. DenBaars, Shuji Nakamura | 2011-12-27 |
| 8080469 | Method for increasing the area of non-polar and semi-polar nitride substrates | Asako Hirai, Steven P. DenBaars, Shuji Nakamura | 2011-12-20 |
| 8044417 | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation | Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura, Steven P. DenBaars | 2011-10-25 |
| 8044383 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Hong Zhong, Anurag Tyagi, Steven P. DenBaars, Shuji Nakamura | 2011-10-25 |
| 7982208 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, Shuji Nakamura +1 more | 2011-07-19 |
| 7976630 | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture | Christiane Poblenz, Derrick S. Kamber | 2011-07-12 |
| 7956371 | High efficiency light emitting diode (LED) | Steven P. DenBaars, Shuji Nakamura | 2011-06-07 |
| 7956360 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Melvin McLaurin, Steven P. DenBaars, Shuji Nakamura | 2011-06-07 |
| 7955983 | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) | Bilge M. Imer, Steven P. DenBaars | 2011-06-07 |
| 7948011 | N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor | Siddharth Rajan, Chang Soo Suh, Umesh Mishra | 2011-05-24 |
| 7880183 | Light emitting device having a plurality of light emitting cells and method of fabricating the same | Chung Hoon Lee, Hong San Kim | 2011-02-01 |