MC

Min Cao

TSMC: 3 patents #78 of 830Top 10%
📍 Hsinchu, CA: #24 of 121 inventorsTop 20%
Overall (2011): #40,838 of 364,097Top 15%
3
Patents 2011

Issued Patents 2011

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
8044471 MOSFET having a channel mechanically stressed by an epitaxially grown, high K strain layer 2011-10-25
7943961 Strain bars in stressed layers of MOS devices Yen-Sen Wang, Chung-Te Lin, Sheng-Jier Yang 2011-05-17
7944023 Strained Si formed by anneal 2011-05-17