CN

Chun-Feng Nieh

TSMC: 2 patents #147 of 830Top 20%
Overall (2011): #107,572 of 364,097Top 30%
2
Patents 2011

Issued Patents 2011

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
8039375 Shallow junction formation and high dopant activation rate of MOS devices Keh-Chiang Ku, Nai-Han Cheng, Chi-Chun Chen, Li-Te Lin 2011-10-18
7994016 Method for obtaining quality ultra-shallow doped regions and device having same Chun Hsiung Tsai, Da-Wen Lin, Chien-Tai Chan 2011-08-09