Issued Patents 2011
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8044433 | GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage | Takeshi Kawasaki, Ken Nakata | 2011-10-25 |