Issued Patents 2011
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043869 | Magnetic memory device and method of fabricating the same | Yun-seung Shin, Hyun-Geun Byun, Choong-Keun Kwak | 2011-10-25 |
| 8040716 | Controlling a variable resistive memory wordline switch | Byung-Gil Choi | 2011-10-18 |
| 7994493 | Phase change memory devices employing cell diodes and methods of fabricating the same | Du-Eung Kim, Yun-seung Shin, Hyun-Geun Byun, Sang-Beom Kang, Beak-Hyung Cho +1 more | 2011-08-09 |
| 7961508 | Phase-change random access memory | Byung-Gil Choi, Du-Eung Kim, Hye Jin Kim | 2011-06-14 |
| 7952956 | Variable resistance memory device and system | Qi Wang, Kwang-Jin Lee, Taek-Sung Kim, Kwang Ho Kim, Hyun Ho Choi | 2011-05-31 |
| 7952918 | Method of operating a magnetoresistive RAM | Yun-seung Shin | 2011-05-31 |
| 7944741 | Apparatus and systems using phase change memories | Beak-Hyung Cho, Du-Eung Kim | 2011-05-17 |
| 7936612 | Phase change memory device generating program current and method thereof | Beak-Hyung Cho, Mu-Hui Park | 2011-05-03 |
| 7936619 | Nonvolatile memory, memory system, and method of driving | Joon-Min Park, Kwang-Jin Lee, Du-Eung Kim, Hui-Kwon Seo | 2011-05-03 |
| 7924639 | Nonvolatile memory device using resistance material | Joon-Min Park, Sang-Beom Kang, Hyung-Rok Oh | 2011-04-12 |
| 7920405 | Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices | Sang-Beom Kang, Hyung-Rok Oh, Joon-Min Park | 2011-04-05 |
| 7907467 | Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof | Joon-Min Park, Sang-Beom Kang, Hyung-Rok Oh | 2011-03-15 |
| 7903448 | Resistance random access memory having common source line | Hyung-Rok Oh, Sang-Beom Kang, Joon-Min Park | 2011-03-08 |
| 7894236 | Nonvolatile memory devices that utilize read/write merge circuits | Hyung-Rok Oh, Sang-Beom Kang, Joon-Min Park | 2011-02-22 |
| 7889545 | Apparatus and method of nonvolatile memory device having three-level nonvolatile memory cells | Kwang-Jin Lee, Du-Eung Kim | 2011-02-15 |
| 7885098 | Non-volatile phase-change memory device and method of reading the same | Yu-Hwan Ro, Byung-Gil Choi | 2011-02-08 |
| 7881103 | Phase-change memory device and method of fabricating the same | Du-Eung Kim, Chang-Soo Lee, Byung-Gil Choi | 2011-02-01 |
| 7869256 | Bi-directional resistive random access memory capable of multi-decoding and method of writing data thereto | Joon-Min Park, Sang-Beom Kang, Hyung-Rok Oh | 2011-01-11 |